MYXxxSMS01GP32PB1-45/x

Micross’ qualified encapsulated space-grade MRAM utilizing Avalanche Technologies STT-MRAM, is a plastic encapsulated microcircuit screened and qualified to NASA’s electrical, electronic and electromechanical specifications. The 1Gb QED MRAM offers true random read/write access while being inherently highly resistant to magnetic flux & radiation, mitigating the need for radiation shielding while providing near infinite endurance and best-in-class non-volatile data retention. This MRAM device architecture is analogous to Flash technology with an SRAM compatible read/write interface with ECC and a Asynchronous Page Mode feature for enhanced performance.

Benefits

Optimal Design

• Smallest Plastic Rad-Tolerant MRAM package available
• Spin-Torque Transfer technology MRAM is highly resistant to magnetic flux, mitigating the need for radiation shielding
• Spin-Torque Transfer technology has near infinite endurance and data retention greater than 10 years
• MRAM memory offers the fastest access time of non-volatile memories
• Best power profile of all non-volatile memories
  • Standby current: 5.5mA; Active current: 90mA

Flexible Package Options

• Plastic BGA package available in 142 pad/solder-ball provides integration flexibility

Applications

• Space grade processor based systems and FPGA boards
• LEO, MEO, GEO, and HEO space missions
• Satellites
• Launch vehicles
• Space systems and vehicles
• Aerospace Systems